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| DATA SHEET 2N7002 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR VOLTAGE 60 Volts FEATURE N-channel enhancement mode field effect transistor,de.056(1.40) .047(1.20) CURRENT 200 mAmp SOT-23 .119(3.00) .110(2.80) Unit: inch ( mm ) signed for high speed pulse amplifier and drive application,which is manufactured by the N-channel DMOS process. Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above .007(.20) MIN. .083(2.10) .066(1.70) .006(.15) .002(.05) MECHANICS DATA High density cell design for low RDS(ON) Voltage controlled small signal switching. Rugged and reliabale. High saturation current capability. High-speed switching.CMOS logic compatible. CMOS logic compatible input. Not thermal runaway. No secondary breakdown. 1 G 2 S .006(.15) MAX. .020(.50) .013(.35) .044(1.10) .035(.90) D 3 Marking Code: S72 ABSOLUTE MAXIMUM RATING TA=25 Unless otherwise noted SYMBOL VDSS V DRG VGSS ID PD TJ,TSTG R JA PARAMETER Drain-Source Voltage Drain-gate Voltage Gate-Source Voltage Maximum Drain Current-Continue -Pulse (Note1) Maximum power Dissipation Derating Above 25 Operating and Storage Temperature Range Thermal Risistance,Junction-to-Ambient Note: 1.Pulse Test: Pulse Width <300 us, Duty Cycle <2.0%. Value 60 60 20 200 800 350 -55 to +150 357 .103(2.60) .086(2.20) Top View UNIT V V V mA mW /W STAD-SEP.14.2004 PAGE . 1 ELECTRICAL CHRACTERISTICS TA=25 Unless otherwise noted PARAMETER SYMBOL CONDITION MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse BVDSS IDSS IGSSF IGSSR VGS=0V, ID=10 A 60 105 1.0 0.5 100 -100 V A mA nA nA VDS=60V, VGS=0V, TJ=25 VDS=60V, VGS=0V, TJ=125 VDS=0, VGS=20V VDS=0, VGS=-20V ON CHARACTERISTIC(note1) Gate Threshold Voltage Static Drain-Source On-Resisitance Drain-Source On-Voltage On-State Drain Current VGS(th) RDS(ON) VDS(ON) ID(ON) GFS VDS=VGS, ID=250 A 1 2.1 3.7 2.5 7.5 3.75 1.5 500 80 V mA mS V VGS=10V, ID=500mA, TJ=25 VGS=10V, ID=500mA VGS=5.0V, ID=50mA VGS=10V, VDS 2VDS(ON) VDS 2VDS(ON), ID=200mA Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time Turn-Off Time CISS COSS CRSS TON TOFF VDD=30V,RL=25 , ID=500mA VGS=10V, RGEN=25 VDS=25V, VGS=0V, F=1.0MHz 50 25 5 20 20 pF pF pF ns ns STAD-SEP.14.2004 PAGE . 2 2.0 1.8 I D, DRAIN CURRENT (AMPS) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VDS, DRAIN SOURCE VOLTAGE (VOLTS) TA = 25C I D, DRAIN CURRENT (AMPS) VGS = 10 V 9V 8V 7V 6V 5V 4V 3V 9.0 10 1.0 VDS = 10 V 0.8 0.6 0.4 0.2 -55C 125C 25C 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 VGS, GATE SOURCE VOLTAGE (VOLTS) 9.0 10 Figure 1. Ohmic Region Figure 2. Transfer Characteristics r DS(on) , STATIC DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -60 -20 +20 +60 T, TEMPERATURE (C) +100 +140 VGS = 10 V ID = 200 mA VGS(th) , THRESHOLD VOLTAGE (NORMALIZED) 2.4 1.2 1.05 1.1 1.10 1.0 0.95 0.9 0.85 0.8 0.75 0.7 -60 -20 +20 +60 T, TEMPERATURE (C) +100 +140 VDS = VGS ID = 1.0 mA Figure 3. Temperature versus Static Drain-Source On-Resistance Figure 4. Temperature versus Gate Threshold Voltage STAD-SEP.14.2004 PAGE . 3 |
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